
AOB411L
60V P-Channel MOSFET
General Description
Product Summary
The AOB411L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R DS(ON) .This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V DS
I D (at V GS =-10V)
R DS(ON) (at V GS =-10V)
R DS(ON) (at V GS =-4.5V)
-60V
-78A
< 16.5m ?
< 22m ?
100% UIS Tested
100% R g Tested
D
G
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Maximum
-60
±20
Units
V
V
Continuous Drain
Current
Pulsed Drain Current C
Continuous Drain
Current
T C =25°C
T C =100°C
T A =25°C
T A =70°C
I D
I DM
I DSM
-78
-55
-230
-8
-6.5
A
A
Avalanche Current C
Avalanche energy L=0.1mH C
I AS , I AR
E AS , E AR
-77
296
A
mJ
Power Dissipation
B
T C =25°C
T C =100°C
P D
187
93
W
Power Dissipation A
T A =25°C
T A =70°C
P DSM
2.1
1.3
W
Junction and Storage Temperature Range
T J , T STG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
A
AD
t ≤ 10s
Steady-State
Steady-State
R θ JA
R θ JC
11
47
0.6
15
60
0.8
°C/W
°C/W
°C/W
Rev 0: Mar. 2011
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